to-92 plastic-encapsulate transistors A42 transistor ( npn ) features high voltage maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 5 v i c collector current -continuous 500 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 r ? ja thermal resistance, junction to ambient 200 /mw r ? jc thermal resistance, unction to case 83.3 /mw electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100ua, i e =0 300 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 300 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =200v, i e =0 0.25 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a h fe(1) v ce =10v, i c =1ma 60 h fe(2) v ce =10v, i c =10ma 80 250 dc current gain h fe(3) v ce =10v, i c =30ma 75 collector-emitter saturation voltage v ce(sat) i c =20ma, i b =2ma 0.2 v base-emitter saturation voltage v be(sat) i c =20ma, i b =2ma 0.9 v transition frequency f t v ce =20v, i c =10ma,f=30mh z 50 mhz classification of h fe(2) rank a b 1 b 2 c range 80-100 100-150 150-200 200-250 1 2 3 to-92 1. emitter 2. base 3. collector tiger electronic co.,ltd
typical characteristics A42
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